STT-BSNN: An In-Memory Deep Binary Spiking Neural Network Based on STT-MRAM

This paper proposes an in-memory binary spiking neural network (BSNN) based on spin-transfer-torque magnetoresistive RAM (STT-MRAM). We propose residual BSNN learning using a surrogate gradient that shortens the time steps in the BSNN while maintaining sufficient accuracy. At the circuit level, pres...

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Autores principales: Van-Tinh Nguyen, Quang-Kien Trinh, Renyuan Zhang, Yasuhiko Nakashima
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
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Acceso en línea:https://doaj.org/article/fdc82db0a0f44b1380ee2886de2abf87
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