Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure
We demonstrate an ultrabroadband electrically controllable terahertz modulator based on a Schottky diode structure formed with periodic metal microslits on an n-doped GaAs substrate. The mechanism of our design is different from that of the traditional Schottky diode-based THz electrical modulator,...
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| Auteurs principaux: | , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
AIP Publishing LLC
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/fde505c042bf462fb348f8be20165474 |
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