Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure

We demonstrate an ultrabroadband electrically controllable terahertz modulator based on a Schottky diode structure formed with periodic metal microslits on an n-doped GaAs substrate. The mechanism of our design is different from that of the traditional Schottky diode-based THz electrical modulator,...

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Autores principales: Xudong Liu, Hao Chen, Shixiong Liang, Meng Zhang, Zhendong Jiang, Shuting Fan, Yiwen Sun
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Lenguaje:EN
Publicado: AIP Publishing LLC 2021
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Acceso en línea:https://doaj.org/article/fde505c042bf462fb348f8be20165474
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spelling oai:doaj.org-article:fde505c042bf462fb348f8be201654742021-12-01T18:51:31ZUltrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure2378-096710.1063/5.0064643https://doaj.org/article/fde505c042bf462fb348f8be201654742021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0064643https://doaj.org/toc/2378-0967We demonstrate an ultrabroadband electrically controllable terahertz modulator based on a Schottky diode structure formed with periodic metal microslits on an n-doped GaAs substrate. The mechanism of our design is different from that of the traditional Schottky diode-based THz electrical modulator, which uses free charge carriers in a substrate to control the resonant behavior of metamaterials. In our device, the modulation is based on free-carrier absorption on the THz wave and therefore broadband. The charge carrier concentration between the metal microslits is actively modified by applying a reverse bias voltage to generate a direct modulation of THz waves. The modulation performance is enhanced by the THz non-resonant electric field enhancement effect from the metal microslits. The experimental results indicate that the modulation depth is positively correlated with the electric field enhancement ratio at the depletion region in the gap and the number of microslits in the THz light spot-covered area. An averaged modulation depth of ∼40% in the measurable frequency range from 0.4 to 1.4 THz was achieved by the device with a metal microslits gap width of 2 µm and a period of 20 µm. A maximum modulation depth of ∼75% was achieved by stacking two devices back-to-back with a 3-dB down bandwidth modulation speed of ∼100 kHz. Further improvements of the device can be achieved by optimizing the parameters such as the free-carrier density in the doping layer, the active area size, and the specifications of the metal microslits.Xudong LiuHao ChenShixiong LiangMeng ZhangZhendong JiangShuting FanYiwen SunAIP Publishing LLCarticleApplied optics. PhotonicsTA1501-1820ENAPL Photonics, Vol 6, Iss 11, Pp 111301-111301-6 (2021)
institution DOAJ
collection DOAJ
language EN
topic Applied optics. Photonics
TA1501-1820
spellingShingle Applied optics. Photonics
TA1501-1820
Xudong Liu
Hao Chen
Shixiong Liang
Meng Zhang
Zhendong Jiang
Shuting Fan
Yiwen Sun
Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure
description We demonstrate an ultrabroadband electrically controllable terahertz modulator based on a Schottky diode structure formed with periodic metal microslits on an n-doped GaAs substrate. The mechanism of our design is different from that of the traditional Schottky diode-based THz electrical modulator, which uses free charge carriers in a substrate to control the resonant behavior of metamaterials. In our device, the modulation is based on free-carrier absorption on the THz wave and therefore broadband. The charge carrier concentration between the metal microslits is actively modified by applying a reverse bias voltage to generate a direct modulation of THz waves. The modulation performance is enhanced by the THz non-resonant electric field enhancement effect from the metal microslits. The experimental results indicate that the modulation depth is positively correlated with the electric field enhancement ratio at the depletion region in the gap and the number of microslits in the THz light spot-covered area. An averaged modulation depth of ∼40% in the measurable frequency range from 0.4 to 1.4 THz was achieved by the device with a metal microslits gap width of 2 µm and a period of 20 µm. A maximum modulation depth of ∼75% was achieved by stacking two devices back-to-back with a 3-dB down bandwidth modulation speed of ∼100 kHz. Further improvements of the device can be achieved by optimizing the parameters such as the free-carrier density in the doping layer, the active area size, and the specifications of the metal microslits.
format article
author Xudong Liu
Hao Chen
Shixiong Liang
Meng Zhang
Zhendong Jiang
Shuting Fan
Yiwen Sun
author_facet Xudong Liu
Hao Chen
Shixiong Liang
Meng Zhang
Zhendong Jiang
Shuting Fan
Yiwen Sun
author_sort Xudong Liu
title Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure
title_short Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure
title_full Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure
title_fullStr Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure
title_full_unstemmed Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure
title_sort ultrabroadband electrically controllable terahertz modulation based on gaas schottky diode structure
publisher AIP Publishing LLC
publishDate 2021
url https://doaj.org/article/fde505c042bf462fb348f8be20165474
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