Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure
We demonstrate an ultrabroadband electrically controllable terahertz modulator based on a Schottky diode structure formed with periodic metal microslits on an n-doped GaAs substrate. The mechanism of our design is different from that of the traditional Schottky diode-based THz electrical modulator,...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/fde505c042bf462fb348f8be20165474 |
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