Charge transport mechanism in the forming-free memristor based on silicon nitride
Abstract Nonstoichiometric silicon nitride SiN x is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/fdf3fffcda49418daf39b1af82ad5d2e |
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