Charge transport mechanism in the forming-free memristor based on silicon nitride

Abstract Nonstoichiometric silicon nitride SiN x is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present...

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Autores principales:	Andrei A. Gismatulin, Gennadiy N. Kamaev, Vladimir N. Kruchinin, Vladimir A. Gritsenko, Oleg M. Orlov, Albert Chin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/fdf3fffcda49418daf39b1af82ad5d2e
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spelling	oai:doaj.org-article:fdf3fffcda49418daf39b1af82ad5d2e2021-12-02T14:16:06ZCharge transport mechanism in the forming-free memristor based on silicon nitride10.1038/s41598-021-82159-72045-2322https://doaj.org/article/fdf3fffcda49418daf39b1af82ad5d2e2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-82159-7https://doaj.org/toc/2045-2322Abstract Nonstoichiometric silicon nitride SiN x is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, Shklovskii–Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiN x -based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.Andrei A. GismatulinGennadiy N. KamaevVladimir N. KruchininVladimir A. GritsenkoOleg M. OrlovAlbert ChinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Andrei A. Gismatulin Gennadiy N. Kamaev Vladimir N. Kruchinin Vladimir A. Gritsenko Oleg M. Orlov Albert Chin Charge transport mechanism in the forming-free memristor based on silicon nitride
description	Abstract Nonstoichiometric silicon nitride SiN x is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, Shklovskii–Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiN x -based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.
format	article
author	Andrei A. Gismatulin Gennadiy N. Kamaev Vladimir N. Kruchinin Vladimir A. Gritsenko Oleg M. Orlov Albert Chin
author_facet	Andrei A. Gismatulin Gennadiy N. Kamaev Vladimir N. Kruchinin Vladimir A. Gritsenko Oleg M. Orlov Albert Chin
author_sort	Andrei A. Gismatulin
title	Charge transport mechanism in the forming-free memristor based on silicon nitride
title_short	Charge transport mechanism in the forming-free memristor based on silicon nitride
title_full	Charge transport mechanism in the forming-free memristor based on silicon nitride
title_fullStr	Charge transport mechanism in the forming-free memristor based on silicon nitride
title_full_unstemmed	Charge transport mechanism in the forming-free memristor based on silicon nitride
title_sort	charge transport mechanism in the forming-free memristor based on silicon nitride
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/fdf3fffcda49418daf39b1af82ad5d2e
work_keys_str_mv	AT andreiagismatulin chargetransportmechanismintheformingfreememristorbasedonsiliconnitride AT gennadiynkamaev chargetransportmechanismintheformingfreememristorbasedonsiliconnitride AT vladimirnkruchinin chargetransportmechanismintheformingfreememristorbasedonsiliconnitride AT vladimiragritsenko chargetransportmechanismintheformingfreememristorbasedonsiliconnitride AT olegmorlov chargetransportmechanismintheformingfreememristorbasedonsiliconnitride AT albertchin chargetransportmechanismintheformingfreememristorbasedonsiliconnitride
_version_	1718391762331893760

Charge transport mechanism in the forming-free memristor based on silicon nitride

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