An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device

A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al<sub>2</sub>O<sub>3</sub>/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films presen...

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Autores principales: Sae-Wan Kim, JinBeom Kwon, Jae-Sung Lee, Byoung-Ho Kang, Sang-Won Lee, Dong Geon Jung, Jun-Yeop Lee, Maeum Han, Ok-Geun Kim, Gopalan Saianand, Daewoong Jung
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/ff2738044a484bf58ec52d527fa227b1
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