Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As metamorphic high-electron-mobility transistor (M...

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Autores principales: Houng-Wei Chen, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, Yeong-Her Wang
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
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Isolation
metamorphic high-electron-mobility transistor (MHEMT)
oxidation
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/ff7f8d2cf84c496fbeee9a42c25396bc
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spelling oai:doaj.org-article:ff7f8d2cf84c496fbeee9a42c25396bc2021-11-19T00:01:53ZPlanarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation2168-673410.1109/JEDS.2021.3054399https://doaj.org/article/ff7f8d2cf84c496fbeee9a42c25396bc2021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9335957/https://doaj.org/toc/2168-6734The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As metamorphic high-electron-mobility transistor (MHEMT). Through a simple, low-temperature process not requiring costly machinery, electrical isolation of components was accomplished. In addition, multiple advantages were gained, including the production of planarized surfaces, low pollution, and reduction in the subsequent disposal of wet etching solution and costs for dry etching or ion implantation. Because of the decrease in lateral defect density caused by wet or dry etching and the further decrease in gate leakage current owing to the isolated oxide film, the performance of devices, with improved DC characteristics, less flicker noise, and enhanced high-frequency performance, can be increased.Houng-Wei ChenTsung-Ying LeeJung-Sheng HuangKuan-Wei LeeYeong-Her WangIEEEarticleIsolationmetamorphic high-electron-mobility transistor (MHEMT)oxidationElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 271-277 (2021)
institution DOAJ
collection DOAJ
language EN
topic Isolation
metamorphic high-electron-mobility transistor (MHEMT)
oxidation
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
spellingShingle Isolation
metamorphic high-electron-mobility transistor (MHEMT)
oxidation
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Houng-Wei Chen
Tsung-Ying Lee
Jung-Sheng Huang
Kuan-Wei Lee
Yeong-Her Wang
Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
description The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As metamorphic high-electron-mobility transistor (MHEMT). Through a simple, low-temperature process not requiring costly machinery, electrical isolation of components was accomplished. In addition, multiple advantages were gained, including the production of planarized surfaces, low pollution, and reduction in the subsequent disposal of wet etching solution and costs for dry etching or ion implantation. Because of the decrease in lateral defect density caused by wet or dry etching and the further decrease in gate leakage current owing to the isolated oxide film, the performance of devices, with improved DC characteristics, less flicker noise, and enhanced high-frequency performance, can be increased.
format article
author Houng-Wei Chen
Tsung-Ying Lee
Jung-Sheng Huang
Kuan-Wei Lee
Yeong-Her Wang
author_facet Houng-Wei Chen
Tsung-Ying Lee
Jung-Sheng Huang
Kuan-Wei Lee
Yeong-Her Wang
author_sort Houng-Wei Chen
title Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
title_short Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
title_full Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
title_fullStr Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
title_full_unstemmed Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
title_sort planarized trench isolation of in<sub>0.52</sub>al<sub>0.48</sub>as/in<sub>0.8</sub>ga<sub>0.2</sub>as metamorphic high-electron-mobility transistor by liquid phase chemical enhanced oxidation
publisher IEEE
publishDate 2021
url https://doaj.org/article/ff7f8d2cf84c496fbeee9a42c25396bc
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AT tsungyinglee planarizedtrenchisolationofinsub052subalsub048subasinsub08subgasub02subasmetamorphichighelectronmobilitytransistorbyliquidphasechemicalenhancedoxidation
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AT kuanweilee planarizedtrenchisolationofinsub052subalsub048subasinsub08subgasub02subasmetamorphichighelectronmobilitytransistorbyliquidphasechemicalenhancedoxidation
AT yeongherwang planarizedtrenchisolationofinsub052subalsub048subasinsub08subgasub02subasmetamorphichighelectronmobilitytransistorbyliquidphasechemicalenhancedoxidation
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