Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As metamorphic high-electron-mobility transistor (M...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ff7f8d2cf84c496fbeee9a42c25396bc |
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