Planarized Trench Isolation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.8</sub>Ga<sub>0.2</sub>As metamorphic high-electron-mobility transistor (M...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
IEEE
2021
|
| Subjects: | |
| Online Access: | https://doaj.org/article/ff7f8d2cf84c496fbeee9a42c25396bc |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|