Electron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures

We study hole-phonon interactions as well as charge and spin scattering mechanisms from hole gas fluctuations including their overlapping with phonon features by using near infrared excitation of doped bulk p-GaAs and by self-assembled InAs/GaAs quantum dot structures. Theoretical arguments a...

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Autores principales: Bairamov, B., Toporov, V., Voitenco, V., Irmer, Gert, Monecke, J.
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
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Acceso en línea:https://doaj.org/article/ff853984463d44c18dc462927dedf142
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