Electron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures

We study hole-phonon interactions as well as charge and spin scattering mechanisms from hole gas fluctuations including their overlapping with phonon features by using near infrared excitation of doped bulk p-GaAs and by self-assembled InAs/GaAs quantum dot structures. Theoretical arguments a...

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Autores principales: Bairamov, B., Toporov, V., Voitenco, V., Irmer, Gert, Monecke, J.
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
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Acceso en línea:https://doaj.org/article/ff853984463d44c18dc462927dedf142
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spelling oai:doaj.org-article:ff853984463d44c18dc462927dedf1422021-11-21T12:09:00ZElectron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures2537-63651810-648Xhttps://doaj.org/article/ff853984463d44c18dc462927dedf1422006-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3524https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365We study hole-phonon interactions as well as charge and spin scattering mechanisms from hole gas fluctuations including their overlapping with phonon features by using near infrared excitation of doped bulk p-GaAs and by self-assembled InAs/GaAs quantum dot structures. Theoretical arguments and experimental evidence of acoustic plasmon existence are presented. Bairamov, B.Toporov, V.Voitenco, V.Irmer, GertMonecke, J.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 3-4, Pp 312-319 (2006)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Bairamov, B.
Toporov, V.
Voitenco, V.
Irmer, Gert
Monecke, J.
Electron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures
description We study hole-phonon interactions as well as charge and spin scattering mechanisms from hole gas fluctuations including their overlapping with phonon features by using near infrared excitation of doped bulk p-GaAs and by self-assembled InAs/GaAs quantum dot structures. Theoretical arguments and experimental evidence of acoustic plasmon existence are presented.
format article
author Bairamov, B.
Toporov, V.
Voitenco, V.
Irmer, Gert
Monecke, J.
author_facet Bairamov, B.
Toporov, V.
Voitenco, V.
Irmer, Gert
Monecke, J.
author_sort Bairamov, B.
title Electron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures
title_short Electron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures
title_full Electron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures
title_fullStr Electron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures
title_full_unstemmed Electron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures
title_sort electron-phonon interactions in multi-component hole gas plasma in polar semiconductors: from bulk to quantum dot structures
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2006
url https://doaj.org/article/ff853984463d44c18dc462927dedf142
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AT toporovv electronphononinteractionsinmulticomponentholegasplasmainpolarsemiconductorsfrombulktoquantumdotstructures
AT voitencov electronphononinteractionsinmulticomponentholegasplasmainpolarsemiconductorsfrombulktoquantumdotstructures
AT irmergert electronphononinteractionsinmulticomponentholegasplasmainpolarsemiconductorsfrombulktoquantumdotstructures
AT moneckej electronphononinteractionsinmulticomponentholegasplasmainpolarsemiconductorsfrombulktoquantumdotstructures
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