Electrically reversible cracks in an intermetallic film controlled by an electric field

Electric-field-induced cracks are generally detrimental to functionality of ferroelectric ceramics. Liu et al. use an intermetallic alloy and ferroelectric oxide junction to mediate the reversible formation of cracks at nanoscales, resulting in colossal electroresistance modulation for memory applic...

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Autores principales: Z. Q. Liu, J. H. Liu, M. D. Biegalski, J.-M. Hu, S. L. Shang, Y. Ji, J. M. Wang, S. L. Hsu, A. T. Wong, M. J. Cordill, B. Gludovatz, C. Marker, H. Yan, Z. X. Feng, L. You, M. W. Lin, T. Z. Ward, Z. K. Liu, C. B. Jiang, L. Q. Chen, R. O. Ritchie, H. M. Christen, R. Ramesh
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/ffb9973e1ed645078b4f227d83caeac4
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spelling oai:doaj.org-article:ffb9973e1ed645078b4f227d83caeac42021-12-02T17:31:16ZElectrically reversible cracks in an intermetallic film controlled by an electric field10.1038/s41467-017-02454-82041-1723https://doaj.org/article/ffb9973e1ed645078b4f227d83caeac42018-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-02454-8https://doaj.org/toc/2041-1723Electric-field-induced cracks are generally detrimental to functionality of ferroelectric ceramics. Liu et al. use an intermetallic alloy and ferroelectric oxide junction to mediate the reversible formation of cracks at nanoscales, resulting in colossal electroresistance modulation for memory applications.Z. Q. LiuJ. H. LiuM. D. BiegalskiJ.-M. HuS. L. ShangY. JiJ. M. WangS. L. HsuA. T. WongM. J. CordillB. GludovatzC. MarkerH. YanZ. X. FengL. YouM. W. LinT. Z. WardZ. K. LiuC. B. JiangL. Q. ChenR. O. RitchieH. M. ChristenR. RameshNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Z. Q. Liu
J. H. Liu
M. D. Biegalski
J.-M. Hu
S. L. Shang
Y. Ji
J. M. Wang
S. L. Hsu
A. T. Wong
M. J. Cordill
B. Gludovatz
C. Marker
H. Yan
Z. X. Feng
L. You
M. W. Lin
T. Z. Ward
Z. K. Liu
C. B. Jiang
L. Q. Chen
R. O. Ritchie
H. M. Christen
R. Ramesh
Electrically reversible cracks in an intermetallic film controlled by an electric field
description Electric-field-induced cracks are generally detrimental to functionality of ferroelectric ceramics. Liu et al. use an intermetallic alloy and ferroelectric oxide junction to mediate the reversible formation of cracks at nanoscales, resulting in colossal electroresistance modulation for memory applications.
format article
author Z. Q. Liu
J. H. Liu
M. D. Biegalski
J.-M. Hu
S. L. Shang
Y. Ji
J. M. Wang
S. L. Hsu
A. T. Wong
M. J. Cordill
B. Gludovatz
C. Marker
H. Yan
Z. X. Feng
L. You
M. W. Lin
T. Z. Ward
Z. K. Liu
C. B. Jiang
L. Q. Chen
R. O. Ritchie
H. M. Christen
R. Ramesh
author_facet Z. Q. Liu
J. H. Liu
M. D. Biegalski
J.-M. Hu
S. L. Shang
Y. Ji
J. M. Wang
S. L. Hsu
A. T. Wong
M. J. Cordill
B. Gludovatz
C. Marker
H. Yan
Z. X. Feng
L. You
M. W. Lin
T. Z. Ward
Z. K. Liu
C. B. Jiang
L. Q. Chen
R. O. Ritchie
H. M. Christen
R. Ramesh
author_sort Z. Q. Liu
title Electrically reversible cracks in an intermetallic film controlled by an electric field
title_short Electrically reversible cracks in an intermetallic film controlled by an electric field
title_full Electrically reversible cracks in an intermetallic film controlled by an electric field
title_fullStr Electrically reversible cracks in an intermetallic film controlled by an electric field
title_full_unstemmed Electrically reversible cracks in an intermetallic film controlled by an electric field
title_sort electrically reversible cracks in an intermetallic film controlled by an electric field
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/ffb9973e1ed645078b4f227d83caeac4
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