Electrically reversible cracks in an intermetallic film controlled by an electric field

Electric-field-induced cracks are generally detrimental to functionality of ferroelectric ceramics. Liu et al. use an intermetallic alloy and ferroelectric oxide junction to mediate the reversible formation of cracks at nanoscales, resulting in colossal electroresistance modulation for memory applic...

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Auteurs principaux:	Z. Q. Liu, J. H. Liu, M. D. Biegalski, J.-M. Hu, S. L. Shang, Y. Ji, J. M. Wang, S. L. Hsu, A. T. Wong, M. J. Cordill, B. Gludovatz, C. Marker, H. Yan, Z. X. Feng, L. You, M. W. Lin, T. Z. Ward, Z. K. Liu, C. B. Jiang, L. Q. Chen, R. O. Ritchie, H. M. Christen, R. Ramesh
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2018
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/ffb9973e1ed645078b4f227d83caeac4
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spelling	oai:doaj.org-article:ffb9973e1ed645078b4f227d83caeac42021-12-02T17:31:16ZElectrically reversible cracks in an intermetallic film controlled by an electric field10.1038/s41467-017-02454-82041-1723https://doaj.org/article/ffb9973e1ed645078b4f227d83caeac42018-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-02454-8https://doaj.org/toc/2041-1723Electric-field-induced cracks are generally detrimental to functionality of ferroelectric ceramics. Liu et al. use an intermetallic alloy and ferroelectric oxide junction to mediate the reversible formation of cracks at nanoscales, resulting in colossal electroresistance modulation for memory applications.Z. Q. LiuJ. H. LiuM. D. BiegalskiJ.-M. HuS. L. ShangY. JiJ. M. WangS. L. HsuA. T. WongM. J. CordillB. GludovatzC. MarkerH. YanZ. X. FengL. YouM. W. LinT. Z. WardZ. K. LiuC. B. JiangL. Q. ChenR. O. RitchieH. M. ChristenR. RameshNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Z. Q. Liu J. H. Liu M. D. Biegalski J.-M. Hu S. L. Shang Y. Ji J. M. Wang S. L. Hsu A. T. Wong M. J. Cordill B. Gludovatz C. Marker H. Yan Z. X. Feng L. You M. W. Lin T. Z. Ward Z. K. Liu C. B. Jiang L. Q. Chen R. O. Ritchie H. M. Christen R. Ramesh Electrically reversible cracks in an intermetallic film controlled by an electric field
description	Electric-field-induced cracks are generally detrimental to functionality of ferroelectric ceramics. Liu et al. use an intermetallic alloy and ferroelectric oxide junction to mediate the reversible formation of cracks at nanoscales, resulting in colossal electroresistance modulation for memory applications.
format	article
author	Z. Q. Liu J. H. Liu M. D. Biegalski J.-M. Hu S. L. Shang Y. Ji J. M. Wang S. L. Hsu A. T. Wong M. J. Cordill B. Gludovatz C. Marker H. Yan Z. X. Feng L. You M. W. Lin T. Z. Ward Z. K. Liu C. B. Jiang L. Q. Chen R. O. Ritchie H. M. Christen R. Ramesh
author_facet	Z. Q. Liu J. H. Liu M. D. Biegalski J.-M. Hu S. L. Shang Y. Ji J. M. Wang S. L. Hsu A. T. Wong M. J. Cordill B. Gludovatz C. Marker H. Yan Z. X. Feng L. You M. W. Lin T. Z. Ward Z. K. Liu C. B. Jiang L. Q. Chen R. O. Ritchie H. M. Christen R. Ramesh
author_sort	Z. Q. Liu
title	Electrically reversible cracks in an intermetallic film controlled by an electric field
title_short	Electrically reversible cracks in an intermetallic film controlled by an electric field
title_full	Electrically reversible cracks in an intermetallic film controlled by an electric field
title_fullStr	Electrically reversible cracks in an intermetallic film controlled by an electric field
title_full_unstemmed	Electrically reversible cracks in an intermetallic film controlled by an electric field
title_sort	electrically reversible cracks in an intermetallic film controlled by an electric field
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/ffb9973e1ed645078b4f227d83caeac4
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Electrically reversible cracks in an intermetallic film controlled by an electric field

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