Theoretical and Experimental Substractions of Device Temperature Determination Utilizing I-V Characterization Applied on AlGaN/GaN HEMT

par Martin Florovič, Jaroslav Kováč, Aleš Chvála, Jaroslav Kováč, Jean-Claude Jacquet, Sylvain Laurent Delage
Publié 2021

Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients

par Jie Zhang, Wei Liu, Shuyuan Zhang
Publié 2021

Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs

par Young Jun Yoon, Jae Sang Lee, In Man Kang, Eun Je Lee, Dong-Seok Kim
Publié 2021

Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

par Sakhone Pharkphoumy, Vallivedu Janardhanam, Tae-Hoon Jang, Jaejun Park, Kyu-Hwan Shim, Chel-Jong Choi
Publié 2021

Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application

par Jianming Lei, Rui Wang, Guo Yang, Jin Wang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Publié 2019

Precise Extraction of Dynamic <italic>R</italic>_dson Under High Frequency and High Voltage by a Double-Diode-Isolation Method

par Jianming Lei, Rui Wang, Guo Yang, Jin Wang, Fulong Jiang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Publié 2019

Graphene/AlGaN/GaN RF Switch

par Yevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Paweł Prystawko, Maksym Dub, Wojciech Knap, Sergey Rumyantsev, Grzegorz Cywiński
Publié 2021

Normally-OFF GaN MIS-HEMT With F^&#x2212; Doped Gate Insulator Using Standard Ion Implantation

par Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang
Publié 2018

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

par Haiyong Wang, Wei Mao, Shenglei Zhao, Ming Du, Yachao Zhang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Publié 2021

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

par X. B. Xu, B. Li, Y. Q. Chen, Z. H. Wu, Z. Y. He, L. Liu, S. Z. He, Y. F. En, Y. Huang
Publié 2021

Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K

par Shih-Ming Huang, Mu-Jen Lai, Rui-Sen Liu, Tsung-Yen Liu, Ray-Ming Lin
Publié 2021