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421por Jorge Quereda, Jan Hidding, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Marcos H. D. Guimarães“... such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors...”
Publicado 2021
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422“... such as splitters, interferometers, or edge spin wave transistors with unprecedented characteristics and a...”
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423por Shigeyuki Imura, Keitada Mineo, Yuki Honda, Toshiki Arai, Kazunori Miyakawa, Toshihisa Watabe, Misao Kubota, Keisuke Nishimoto, Mutsumi Sugiyama, Masakazu Nanba“... transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. Using low...”
Publicado 2020
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424“...A DC model for silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs...”
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425“... high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased...”
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426por Ayoub Zumeit, Abhishek Singh Dahiya, Adamos Christou, Dhayalan Shakthivel, Ravinder Dahiya“..., orientation, etc.) and transfer yield (∼95%). The silicon NR based field-effect transistors printed using...”
Publicado 2021
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427“... of the insulated gate bipolar transistors and diodes. The thermal management of a PE module is the main objective...”
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428“... and multiplication, in the ternary Galois field through carbon nanotube field-effect transistors (CNTFETs). Ternary...”
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429por Yipeng An, Kun Wang, Shijing Gong, Yusheng Hou, Chunlan Ma, Mingfu Zhu, Chuanxi Zhao, Tianxing Wang, Shuhong Ma, Heyan Wang, Ruqian Wu, Wuming Liu“...-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin...”
Publicado 2021
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430por Jiaqi Zhang, Yichang Wu, Guofang Yang, Dazheng Chen, Jincheng Zhang, Hailong You, Chunfu Zhang, Yue Hao“... Transistors) on sapphire substrate were fabricated by using the optimized transfer technology....”
Publicado 2021
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431“... potential of Polarization Super Junctions (PSJs) compared to conventional High-Electron-Mobility Transistors...”
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432por Suany Vázquez-Valdés, Raúl Juárez-Aguirre, Rosa Woo-García, Primavera Argüelles-Lucho, Agustín Herrera-May, Johan Jair Estrada-López, Francisco López-Huerta“... gates (TG) that are composed of four rectifier transistors with a charge of 45 kΩ, a minimum input...”
Publicado 2021
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433por Yu Xu, Yaolin Cheng, Zhe Li, Qian Feng, Yachao Zhang, Dazheng Chen, Weidong Zhu, Jincheng Zhang, Chunfu Zhang, Yue Hao“... and time‐consuming by traditional methods. Bottom‐gate a‐Ga2O3 three terminal thin film transistors (TFTs...”
Publicado 2021
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434Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study“... and field effect transistors etc. In the present work, we have theoretically performed as a model case study...”
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435“...Abstract The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO...”
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436“... transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present...”
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437por Carlotta Peruzzi, Silvia Battistoni, Daniela Montesarchio, Matteo Cocuzza, Simone Luigi Marasso, Alessio Verna, Laura Pasquardini, Roberto Verucchi, Lucrezia Aversa, Victor Erokhin, Pasquale D’Angelo, Salvatore Iannotta“..., selectivity and easy-to-use devices. Organic electrochemical transistors (OECTs) represent a promising class...”
Publicado 2021
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438“... of transistors, thus enabling chipless and wireless operation. We confirmed a large variation in the amplitude...”
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439“... size of transistors may accelerate aging effects, leading to faults. The literature presents techniques...”
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440“..., transistors, components of high-strength machinery, and display screens in mobile devices. In the past decade...”
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