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121por Naveed Ashraf, Ghulam Abbas, Nasim Ullah, Sattam Al Otaibi, Ahmed Althobaiti, Muhammad Zubair, Umar FarooqMaterias: “...switching transistors...”
Publicado 2021
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122
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123“...-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a...”
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124por Naruto Miyakawa, Ayumi Shinagawa, Yasuko Kajiwara, Shota Ushiba, Takao Ono, Yasushi Kanai, Shinsuke Tani, Masahiko Kimura, Kazuhiko MatsumotoMaterias: “...graphene field effect transistors...”
Publicado 2021
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125por Gwangwoo Kim, Sung-Soo Kim, Jonghyuk Jeon, Seong In Yoon, Seokmo Hong, Young Jin Cho, Abhishek Misra, Servet Ozdemir, Jun Yin, Davit Ghazaryan, Matthew Holwill, Artem Mishchenko, Daria V. Andreeva, Yong-Jin Kim, Hu Young Jeong, A-Rang Jang, Hyun-Jong Chung, Andre K. Geim, Kostya S. Novoselov, Byeong-Hyeok Sohn, Hyeon Suk ShinEnlace del recurso
Publicado 2019
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126por Jangyup Son, Soogil Lee, Sang Jin Kim, Byung Cheol Park, Han-Koo Lee, Sanghoon Kim, Jae Hoon Kim, Byung Hee Hong, Jongill Hong“... it in hydrogen plasma, and then use this material to create a room temperature field- effect transistor....”
Publicado 2016
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127por Keiichi Omika, Yasunori Tateno, Tsuyoshi Kouchi, Tsutomu Komatani, Seiji Yaegassi, Keiichi Yui, Ken Nakata, Naoka Nagamura, Masato Kotsugi, Koji Horiba, Masaharu Oshima, Maki Suemitsu, Hirokazu Fukidome“...-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that can...”
Publicado 2018
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128por Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg, Daniel Rhodes, Simin Feng, Shahriar Memaran, Yan Xin, Amber McCreary, Angela R. Hight Walker, Aldo Raeliarijaona, Humberto Terrones, Mauricio Terrones, Stephen McGill, Luis Balicas“...Abstract We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2...”
Publicado 2018
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130
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131por Naho Tsunetomo, Shohei Iguchi, Małgorzata Wierzbowska, Akiko Ueda, Yousang Won, Sinae Heo, Yesul Jeong, Yutaka Wakayama, Kazuhiro Marumoto“... applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies...”
Publicado 2021
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132por Jae-Hyuk Ahn, William M. Parkin, Carl H. Naylor, A. T. Charlie Johnson, Marija Drndić“... monolayer MoS2 by monitoring electrical parameters of MoS2 field-effect transistors as their environment...”
Publicado 2017
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133
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134“... is required. In this work, a UTBB (ultra-thin body and box) based single transistor image sensor has been...”
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135por Kai Wang, Yihong Qi, Yunfeng Hu, Yangbing Xu, Yitong Xu, Jinming Liu, Xianda ZhouMaterias: “...photodiode-gated transistors...”
Publicado 2020
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136“... and carbon nanotube field effect transistor (CNTFET) are introduced in the existing works. But it mainly...”
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137por Alexandra F. Paterson, Achilleas Savva, Shofarul Wustoni, Leonidas Tsetseris, Bryan D. Paulsen, Hendrik Faber, Abdul Hamid Emwas, Xingxing Chen, Georgios Nikiforidis, Tania C. Hidalgo, Maximillian Moser, Iuliana Petruta Maria, Jonathan Rivnay, Iain McCulloch, Thomas D. Anthopoulos, Sahika Inal“...Improving electron transport and stability of n-type organic electrochemical transistors (OECTs...”
Publicado 2020
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138por James W. Borchert, Boyu Peng, Florian Letzkus, Joachim N. Burghartz, Paddy K. L. Chan, Karin Zojer, Sabine Ludwigs, Hagen Klauk“...The widespread adoption of organic thin-film transistors (TFTs) in low-voltage high-frequency...”
Publicado 2019
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139
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140“...-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. Under each gate voltage, the rRTN...”
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