Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

Atomically thin transition metal dichalcogenides offer a platform to explore the valley degree of freedom originating from their electronic band structure. Here, the authors use polarization- and time-resolved spectroscopy to investigate the temperature-dependent valley pseudospin relaxation process...

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Autores principales: Yuhei Miyauchi, Satoru Konabe, Feijiu Wang, Wenjin Zhang, Alexander Hwang, Yusuke Hasegawa, Lizhong Zhou, Shinichiro Mouri, Minglin Toh, Goki Eda, Kazunari Matsuda
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/082912cf98474f188c610f8ea787a283
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