Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

Atomically thin transition metal dichalcogenides offer a platform to explore the valley degree of freedom originating from their electronic band structure. Here, the authors use polarization- and time-resolved spectroscopy to investigate the temperature-dependent valley pseudospin relaxation process...

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Auteurs principaux:	Yuhei Miyauchi, Satoru Konabe, Feijiu Wang, Wenjin Zhang, Alexander Hwang, Yusuke Hasegawa, Lizhong Zhou, Shinichiro Mouri, Minglin Toh, Goki Eda, Kazunari Matsuda
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2018
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/082912cf98474f188c610f8ea787a283
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id	oai:doaj.org-article:082912cf98474f188c610f8ea787a283
record_format	dspace
spelling	oai:doaj.org-article:082912cf98474f188c610f8ea787a2832021-12-02T15:34:27ZEvidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors10.1038/s41467-018-04988-x2041-1723https://doaj.org/article/082912cf98474f188c610f8ea787a2832018-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-04988-xhttps://doaj.org/toc/2041-1723Atomically thin transition metal dichalcogenides offer a platform to explore the valley degree of freedom originating from their electronic band structure. Here, the authors use polarization- and time-resolved spectroscopy to investigate the temperature-dependent valley pseudospin relaxation processes in WSe2 monolayers.Yuhei MiyauchiSatoru KonabeFeijiu WangWenjin ZhangAlexander HwangYusuke HasegawaLizhong ZhouShinichiro MouriMinglin TohGoki EdaKazunari MatsudaNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Yuhei Miyauchi Satoru Konabe Feijiu Wang Wenjin Zhang Alexander Hwang Yusuke Hasegawa Lizhong Zhou Shinichiro Mouri Minglin Toh Goki Eda Kazunari Matsuda Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
description	Atomically thin transition metal dichalcogenides offer a platform to explore the valley degree of freedom originating from their electronic band structure. Here, the authors use polarization- and time-resolved spectroscopy to investigate the temperature-dependent valley pseudospin relaxation processes in WSe2 monolayers.
format	article
author	Yuhei Miyauchi Satoru Konabe Feijiu Wang Wenjin Zhang Alexander Hwang Yusuke Hasegawa Lizhong Zhou Shinichiro Mouri Minglin Toh Goki Eda Kazunari Matsuda
author_facet	Yuhei Miyauchi Satoru Konabe Feijiu Wang Wenjin Zhang Alexander Hwang Yusuke Hasegawa Lizhong Zhou Shinichiro Mouri Minglin Toh Goki Eda Kazunari Matsuda
author_sort	Yuhei Miyauchi
title	Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_short	Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_full	Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_fullStr	Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_full_unstemmed	Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_sort	evidence for line width and carrier screening effects on excitonic valley relaxation in 2d semiconductors
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/082912cf98474f188c610f8ea787a283
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Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

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