Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
Atomically thin transition metal dichalcogenides offer a platform to explore the valley degree of freedom originating from their electronic band structure. Here, the authors use polarization- and time-resolved spectroscopy to investigate the temperature-dependent valley pseudospin relaxation process...
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| Autores principales: | , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/082912cf98474f188c610f8ea787a283 |
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