Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature

In this work, the electrostatic and radio frequency performances of 22 nm FDSOI nMOSFETs with p-type or n-type doped backplane (BP, highly doped layer of silicon below thin buried oxide) at cryogenic temperatures have been investigated. Greater enhancement of drain current <inline-formula> <...

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Autores principales: Tiantian Xie, Qing Wang, Hao Ge, Yinghuan Lv, Zhipeng Ren, Jing Chen
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
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Acceso en línea:https://doaj.org/article/1626b04f45ec4e618814bae339bfac75
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