Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature
In this work, the electrostatic and radio frequency performances of 22 nm FDSOI nMOSFETs with p-type or n-type doped backplane (BP, highly doped layer of silicon below thin buried oxide) at cryogenic temperatures have been investigated. Greater enhancement of drain current <inline-formula> <...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/1626b04f45ec4e618814bae339bfac75 |
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