InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ame...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Ryan C. White, Hongjian Li, Michel Khoury, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
EQE
red
Acceso en línea:https://doaj.org/article/1ac36cc91cfa4fbb99c2ac67bbdfa340
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!