InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ame...

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Autores principales:	Ryan C. White, Hongjian Li, Michel Khoury, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	MOCVD InGaN EQE red long wavelength microLED Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/1ac36cc91cfa4fbb99c2ac67bbdfa340
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spelling	oai:doaj.org-article:1ac36cc91cfa4fbb99c2ac67bbdfa3402021-11-25T17:18:55ZInGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates10.3390/cryst111113642073-4352https://doaj.org/article/1ac36cc91cfa4fbb99c2ac67bbdfa3402021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1364https://doaj.org/toc/2073-4352In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ameliorate high defect density and maintain appropriate lattice constant throughout the growth, high-In quantum wells (QWs) can be grown with improved crystal quality. Improvement to the design of the growth scheme also yields higher power output resulting in an increase to the external quantum efficiency (EQE). Combined, these two improvements allow for an 80 × 80 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula> microLED device emitting at 609 nm to achieve 0.83% EQE. Furthermore, the true In content of the QW is measured using atomic probe tomography (APT) to confirm the improved In incorporation during high temperature active region growth. These developments represent advancement toward the realization of bright, highly efficient red III-nitride LEDs to be used in RGB applications under one material system.Ryan C. WhiteHongjian LiMichel KhouryCheyenne LynskyMichael IzaStacia KellerDavid SottaShuji NakamuraSteven P. DenBaarsMDPI AGarticleMOCVDInGaNEQEredlong wavelengthmicroLEDCrystallographyQD901-999ENCrystals, Vol 11, Iss 1364, p 1364 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	MOCVD InGaN EQE red long wavelength microLED Crystallography QD901-999
spellingShingle	MOCVD InGaN EQE red long wavelength microLED Crystallography QD901-999 Ryan C. White Hongjian Li Michel Khoury Cheyenne Lynsky Michael Iza Stacia Keller David Sotta Shuji Nakamura Steven P. DenBaars InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
description	In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ameliorate high defect density and maintain appropriate lattice constant throughout the growth, high-In quantum wells (QWs) can be grown with improved crystal quality. Improvement to the design of the growth scheme also yields higher power output resulting in an increase to the external quantum efficiency (EQE). Combined, these two improvements allow for an 80 × 80 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula> microLED device emitting at 609 nm to achieve 0.83% EQE. Furthermore, the true In content of the QW is measured using atomic probe tomography (APT) to confirm the improved In incorporation during high temperature active region growth. These developments represent advancement toward the realization of bright, highly efficient red III-nitride LEDs to be used in RGB applications under one material system.
format	article
author	Ryan C. White Hongjian Li Michel Khoury Cheyenne Lynsky Michael Iza Stacia Keller David Sotta Shuji Nakamura Steven P. DenBaars
author_facet	Ryan C. White Hongjian Li Michel Khoury Cheyenne Lynsky Michael Iza Stacia Keller David Sotta Shuji Nakamura Steven P. DenBaars
author_sort	Ryan C. White
title	InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
title_short	InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
title_full	InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
title_fullStr	InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
title_full_unstemmed	InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
title_sort	ingan-based microled devices approaching 1% eqe with red 609 nm electroluminescence on semi-relaxed substrates
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/1ac36cc91cfa4fbb99c2ac67bbdfa340
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InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

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