Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula>VT degradation tha...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Sung-Kyu Kwon, Hyuk-Min Kwon, In-Shik Han, Jae-Hyung Jang, Sun-Ho Oh, Hyeong-Sub Song, Byoung-Seok Park, Yi-Sun Chung, Jung-Hwan Lee, Si-Bum Kim, Ga-Won Lee, Hi-Deok Lee
Formato: article
Lenguaje:EN
Publicado: IEEE 2018
Materias:
Fluorine (F)
activation energy (Ea)
negative bias temperature instability (NBTI)
low-frequency noise (LFN)
random telegraph signal (RTS) noise
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/2a406b49b2d840f8b0cb65bc20a19421
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Internet

https://doaj.org/article/2a406b49b2d840f8b0cb65bc20a19421

Ejemplares similares