Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula>VT degradation tha...

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Autores principales:	Sung-Kyu Kwon, Hyuk-Min Kwon, In-Shik Han, Jae-Hyung Jang, Sun-Ho Oh, Hyeong-Sub Song, Byoung-Seok Park, Yi-Sun Chung, Jung-Hwan Lee, Si-Bum Kim, Ga-Won Lee, Hi-Deok Lee
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2018
Materias:	Fluorine (F) activation energy (Ea) negative bias temperature instability (NBTI) low-frequency noise (LFN) random telegraph signal (RTS) noise Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/2a406b49b2d840f8b0cb65bc20a19421
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spelling	oai:doaj.org-article:2a406b49b2d840f8b0cb65bc20a194212021-11-19T00:00:43ZEffects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs2168-673410.1109/JEDS.2018.2855432https://doaj.org/article/2a406b49b2d840f8b0cb65bc20a194212018-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8410367/https://doaj.org/toc/2168-6734The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula>VT degradation that represents device lifetime of p-MOSFETs with fluorine implantation under negative-bias temperature instability stress was less than that without fluorine implantation. The device lifetimes were improved as the fluorine implantation energy and dose increase. The power law exponent <inline-formula> <tex-math notation="LaTeX">$n $ </tex-math></inline-formula>with the fluorine implantation was larger than that without fluorine implantation. This was related to boron diffusion within the gate oxide because the F atoms enhance the diffusivity of the boron. The difference of flicker noise levels between simulation and measurement data at 1 kHz was much greater than that at 10 Hz, which means that F atoms were mainly located near the Si/SiO<sub>2</sub> interface rather than in the bulk oxide. The fluorine implantation reduced the ID-RTS noise amplitude, which was believed to contribute to the effective passivation of the dominant traps within the gate oxide. Also, the flicker noise was less dependent on implantation energy. But, flicker noise was reduced with increasing implantation dose. Therefore, fluorine implantation is potentially significant for reducing low-frequency noise as well as improving reliability characteristics.Sung-Kyu KwonHyuk-Min KwonIn-Shik HanJae-Hyung JangSun-Ho OhHyeong-Sub SongByoung-Seok ParkYi-Sun ChungJung-Hwan LeeSi-Bum KimGa-Won LeeHi-Deok LeeIEEEarticleFluorine (F)activation energy (Ea)negative bias temperature instability (NBTI)low-frequency noise (LFN)random telegraph signal (RTS) noiseElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 6, Pp 808-814 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Fluorine (F) activation energy (Ea) negative bias temperature instability (NBTI) low-frequency noise (LFN) random telegraph signal (RTS) noise Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Fluorine (F) activation energy (Ea) negative bias temperature instability (NBTI) low-frequency noise (LFN) random telegraph signal (RTS) noise Electrical engineering. Electronics. Nuclear engineering TK1-9971 Sung-Kyu Kwon Hyuk-Min Kwon In-Shik Han Jae-Hyung Jang Sun-Ho Oh Hyeong-Sub Song Byoung-Seok Park Yi-Sun Chung Jung-Hwan Lee Si-Bum Kim Ga-Won Lee Hi-Deok Lee Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
description	The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula>VT degradation that represents device lifetime of p-MOSFETs with fluorine implantation under negative-bias temperature instability stress was less than that without fluorine implantation. The device lifetimes were improved as the fluorine implantation energy and dose increase. The power law exponent <inline-formula> <tex-math notation="LaTeX">$n $ </tex-math></inline-formula>with the fluorine implantation was larger than that without fluorine implantation. This was related to boron diffusion within the gate oxide because the F atoms enhance the diffusivity of the boron. The difference of flicker noise levels between simulation and measurement data at 1 kHz was much greater than that at 10 Hz, which means that F atoms were mainly located near the Si/SiO<sub>2</sub> interface rather than in the bulk oxide. The fluorine implantation reduced the ID-RTS noise amplitude, which was believed to contribute to the effective passivation of the dominant traps within the gate oxide. Also, the flicker noise was less dependent on implantation energy. But, flicker noise was reduced with increasing implantation dose. Therefore, fluorine implantation is potentially significant for reducing low-frequency noise as well as improving reliability characteristics.
format	article
author	Sung-Kyu Kwon Hyuk-Min Kwon In-Shik Han Jae-Hyung Jang Sun-Ho Oh Hyeong-Sub Song Byoung-Seok Park Yi-Sun Chung Jung-Hwan Lee Si-Bum Kim Ga-Won Lee Hi-Deok Lee
author_facet	Sung-Kyu Kwon Hyuk-Min Kwon In-Shik Han Jae-Hyung Jang Sun-Ho Oh Hyeong-Sub Song Byoung-Seok Park Yi-Sun Chung Jung-Hwan Lee Si-Bum Kim Ga-Won Lee Hi-Deok Lee
author_sort	Sung-Kyu Kwon
title	Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
title_short	Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
title_full	Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
title_fullStr	Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
title_full_unstemmed	Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
title_sort	effects of fluorine on the nbti reliability and low-frequency noise characteristics of p-mosfets
publisher	IEEE
publishDate	2018
url	https://doaj.org/article/2a406b49b2d840f8b0cb65bc20a19421
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Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

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