Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula>VT degradation tha...
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/2a406b49b2d840f8b0cb65bc20a19421 |
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