Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The <inline-formula> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula>VT degradation tha...

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Auteurs principaux:	Sung-Kyu Kwon, Hyuk-Min Kwon, In-Shik Han, Jae-Hyung Jang, Sun-Ho Oh, Hyeong-Sub Song, Byoung-Seok Park, Yi-Sun Chung, Jung-Hwan Lee, Si-Bum Kim, Ga-Won Lee, Hi-Deok Lee
Format:	article
Langue:	EN
Publié:	IEEE 2018
Sujets:	Fluorine (F) activation energy (Ea) negative bias temperature instability (NBTI) low-frequency noise (LFN) random telegraph signal (RTS) noise Electrical engineering. Electronics. Nuclear engineering TK1-9971
Accès en ligne:	https://doaj.org/article/2a406b49b2d840f8b0cb65bc20a19421
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Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

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