A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation

Abstract Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved. This paper proposes a novel hybrid termination structure for ve...

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Bibliographic Details
Main Authors: Jian Li, Feng Lin, Yong Chen, Wei He, Xinke Liu
Format: article
Language:EN
Published: Wiley 2021
Subjects:
Online Access:https://doaj.org/article/32d8f67dc1ce439988b3912291ef2c80
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