GeSnOI mid-infrared laser technology

GeSnOI mid-infrared laser technology

Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confineme...

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Detalles Bibliográficos
Autores principales: Binbin Wang, Emilie Sakat, Etienne Herth, Maksym Gromovyi, Andjelika Bjelajac, Julien Chaste, Gilles Patriarche, Philippe Boucaud, Frédéric Boeuf, Nicolas Pauc, Vincent Calvo, Jérémie Chrétien, Marvin Frauenrath, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi
Formato: article
Lenguaje:EN
Publicado: Nature Publishing Group 2021
Materias:
Applied optics. Photonics
TA1501-1820
Optics. Light
QC350-467
Acceso en línea:https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a
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https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a

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