GeSnOI mid-infrared laser technology

Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confineme...

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Autores principales:	Binbin Wang, Emilie Sakat, Etienne Herth, Maksym Gromovyi, Andjelika Bjelajac, Julien Chaste, Gilles Patriarche, Philippe Boucaud, Frédéric Boeuf, Nicolas Pauc, Vincent Calvo, Jérémie Chrétien, Marvin Frauenrath, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Publishing Group 2021
Materias:	Applied optics. Photonics TA1501-1820 Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a
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spelling	oai:doaj.org-article:37bfa51b9002480b9af4751b7b33e82a2021-11-21T12:26:53ZGeSnOI mid-infrared laser technology10.1038/s41377-021-00675-72047-7538https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a2021-11-01T00:00:00Zhttps://doi.org/10.1038/s41377-021-00675-7https://doaj.org/toc/2047-7538Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge0.9Sn0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.Binbin WangEmilie SakatEtienne HerthMaksym GromovyiAndjelika BjelajacJulien ChasteGilles PatriarchePhilippe BoucaudFrédéric BoeufNicolas PaucVincent CalvoJérémie ChrétienMarvin FrauenrathAlexei ChelnokovVincent ReboudJean-Michel HartmannMoustafa El KurdiNature Publishing GrouparticleApplied optics. PhotonicsTA1501-1820Optics. LightQC350-467ENLight: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Applied optics. Photonics TA1501-1820 Optics. Light QC350-467
spellingShingle	Applied optics. Photonics TA1501-1820 Optics. Light QC350-467 Binbin Wang Emilie Sakat Etienne Herth Maksym Gromovyi Andjelika Bjelajac Julien Chaste Gilles Patriarche Philippe Boucaud Frédéric Boeuf Nicolas Pauc Vincent Calvo Jérémie Chrétien Marvin Frauenrath Alexei Chelnokov Vincent Reboud Jean-Michel Hartmann Moustafa El Kurdi GeSnOI mid-infrared laser technology
description	Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge0.9Sn0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.
format	article
author	Binbin Wang Emilie Sakat Etienne Herth Maksym Gromovyi Andjelika Bjelajac Julien Chaste Gilles Patriarche Philippe Boucaud Frédéric Boeuf Nicolas Pauc Vincent Calvo Jérémie Chrétien Marvin Frauenrath Alexei Chelnokov Vincent Reboud Jean-Michel Hartmann Moustafa El Kurdi
author_facet	Binbin Wang Emilie Sakat Etienne Herth Maksym Gromovyi Andjelika Bjelajac Julien Chaste Gilles Patriarche Philippe Boucaud Frédéric Boeuf Nicolas Pauc Vincent Calvo Jérémie Chrétien Marvin Frauenrath Alexei Chelnokov Vincent Reboud Jean-Michel Hartmann Moustafa El Kurdi
author_sort	Binbin Wang
title	GeSnOI mid-infrared laser technology
title_short	GeSnOI mid-infrared laser technology
title_full	GeSnOI mid-infrared laser technology
title_fullStr	GeSnOI mid-infrared laser technology
title_full_unstemmed	GeSnOI mid-infrared laser technology
title_sort	gesnoi mid-infrared laser technology
publisher	Nature Publishing Group
publishDate	2021
url	https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a
work_keys_str_mv	AT binbinwang gesnoimidinfraredlasertechnology AT emiliesakat gesnoimidinfraredlasertechnology AT etienneherth gesnoimidinfraredlasertechnology AT maksymgromovyi gesnoimidinfraredlasertechnology AT andjelikabjelajac gesnoimidinfraredlasertechnology AT julienchaste gesnoimidinfraredlasertechnology AT gillespatriarche gesnoimidinfraredlasertechnology AT philippeboucaud gesnoimidinfraredlasertechnology AT fredericboeuf gesnoimidinfraredlasertechnology AT nicolaspauc gesnoimidinfraredlasertechnology AT vincentcalvo gesnoimidinfraredlasertechnology AT jeremiechretien gesnoimidinfraredlasertechnology AT marvinfrauenrath gesnoimidinfraredlasertechnology AT alexeichelnokov gesnoimidinfraredlasertechnology AT vincentreboud gesnoimidinfraredlasertechnology AT jeanmichelhartmann gesnoimidinfraredlasertechnology AT moustafaelkurdi gesnoimidinfraredlasertechnology
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GeSnOI mid-infrared laser technology

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