GeSnOI mid-infrared laser technology
Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confineme...
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Autores principales: | Binbin Wang, Emilie Sakat, Etienne Herth, Maksym Gromovyi, Andjelika Bjelajac, Julien Chaste, Gilles Patriarche, Philippe Boucaud, Frédéric Boeuf, Nicolas Pauc, Vincent Calvo, Jérémie Chrétien, Marvin Frauenrath, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Publishing Group
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a |
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