GeSnOI mid-infrared laser technology
Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confineme...
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Auteurs principaux: | , , , , , , , , , , , , , , , , |
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Format: | article |
Langue: | EN |
Publié: |
Nature Publishing Group
2021
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Sujets: | |
Accès en ligne: | https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a |
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