Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes
Abstract Two-dimensional (2D) material based FETs are being considered for future technology nodes and high performance logic applications. However, a comprehensive assessment of 2D material based FETs has been lacking for high performance logic applications considering appropriate system level figu...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/3aba0caa895f420b8b71b17ac1ba4519 |
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| Sumario: | Abstract Two-dimensional (2D) material based FETs are being considered for future technology nodes and high performance logic applications. However, a comprehensive assessment of 2D material based FETs has been lacking for high performance logic applications considering appropriate system level figure-of-merits (FOMs) e.g. delay, and energy-delay product. In this paper, we present guidelines for 2D material based FETs to meet sub-10 nm high performance logic requirements focusing on material requirement, device design, energy-delay optimization for the first time. We show the need for 2D materials with smaller effective mass in the transport direction and anisotropicity to meet the performance requirement for future technology nodes. We present novel device designs with one such 2D material (monolayer black-phosphorus) to keep Moore’s alive for the HP logic in sub-5 nm gate length regime. With these device proposals we show that below 5 nm gate lengths 2D electrostatistics arising from gate stack design becomes more of a challenge than direct source-to-drain tunneling for 2D material-based FETs. Therefore, it is challenging to meet both delay and energy-delay requirement in sub-5 nm gate length regime without scaling both supply voltage (V DD ) and effective-oxide-thickness (EOT) below 0.5 V and 0.5 nm respectively. |
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