Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer
In this work, the properties of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapo...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/41e63c6263494c7e94e1edeaa8d13b04 |
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| Sumario: | In this work, the properties of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapor cooling condensation system was used to deposit the high quality Ga<sub>2</sub>O<sub>3</sub> films with high insulation and low defect suitable for gate insulator layer. The characteristics of the Ga<sub>2</sub>O<sub>3</sub> films were further explored by implementing GaN-based fin-channel array MOSHEMTs with recessed-gates and different channel widths. Compared to planar channel structure, the direct current, high frequency, and flicker noise performances were enhanced in the fin-channel MOSHEMTs with Ga<sub>2</sub>O<sub>3</sub> gate insulator layer. For the GaN-based fin-channel array MOSHEMTs with 300-nm-wide channel, the devices exhibited superior performances of maximum extrinsic transconductance of 194.2 mS/mm, threshold voltage of −1.4 V, extrinsic unit gain cutoff frequency of 6.4 GHz, maximum oscillation frequency of 14.8 GHz, and normalized noise power of 8.45 <inline-formula> <tex-math notation="LaTeX">$\times \,\, 10^{-15}$ </tex-math></inline-formula> Hz<inline-formula> <tex-math notation="LaTeX">$^{-1}$ </tex-math></inline-formula>. It was also demonstrated that the associated performances were improved by reducing the width of fin-channel array. |
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