Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer
In this work, the properties of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapo...
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2021
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oai:doaj.org-article:41e63c6263494c7e94e1edeaa8d13b042021-11-19T00:01:59ZFabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer2168-673410.1109/JEDS.2021.3069973https://doaj.org/article/41e63c6263494c7e94e1edeaa8d13b042021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9392009/https://doaj.org/toc/2168-6734In this work, the properties of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapor cooling condensation system was used to deposit the high quality Ga<sub>2</sub>O<sub>3</sub> films with high insulation and low defect suitable for gate insulator layer. The characteristics of the Ga<sub>2</sub>O<sub>3</sub> films were further explored by implementing GaN-based fin-channel array MOSHEMTs with recessed-gates and different channel widths. Compared to planar channel structure, the direct current, high frequency, and flicker noise performances were enhanced in the fin-channel MOSHEMTs with Ga<sub>2</sub>O<sub>3</sub> gate insulator layer. For the GaN-based fin-channel array MOSHEMTs with 300-nm-wide channel, the devices exhibited superior performances of maximum extrinsic transconductance of 194.2 mS/mm, threshold voltage of −1.4 V, extrinsic unit gain cutoff frequency of 6.4 GHz, maximum oscillation frequency of 14.8 GHz, and normalized noise power of 8.45 <inline-formula> <tex-math notation="LaTeX">$\times \,\, 10^{-15}$ </tex-math></inline-formula> Hz<inline-formula> <tex-math notation="LaTeX">$^{-1}$ </tex-math></inline-formula>. It was also demonstrated that the associated performances were improved by reducing the width of fin-channel array.Hsin-Ying LeeTing-Wei ChangEdward Yi ChangNiklas RorsmanChing-Ting LeeIEEEarticleGa₂O₃ gate insulator layerGaN-based MOSHEMTslaser interference photolithography systemfin-channel arrayvapor cooling condensation systemElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 393-399 (2021) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
Ga₂O₃ gate insulator layer GaN-based MOSHEMTs laser interference photolithography system fin-channel array vapor cooling condensation system Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| spellingShingle |
Ga₂O₃ gate insulator layer GaN-based MOSHEMTs laser interference photolithography system fin-channel array vapor cooling condensation system Electrical engineering. Electronics. Nuclear engineering TK1-9971 Hsin-Ying Lee Ting-Wei Chang Edward Yi Chang Niklas Rorsman Ching-Ting Lee Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer |
| description |
In this work, the properties of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapor cooling condensation system was used to deposit the high quality Ga<sub>2</sub>O<sub>3</sub> films with high insulation and low defect suitable for gate insulator layer. The characteristics of the Ga<sub>2</sub>O<sub>3</sub> films were further explored by implementing GaN-based fin-channel array MOSHEMTs with recessed-gates and different channel widths. Compared to planar channel structure, the direct current, high frequency, and flicker noise performances were enhanced in the fin-channel MOSHEMTs with Ga<sub>2</sub>O<sub>3</sub> gate insulator layer. For the GaN-based fin-channel array MOSHEMTs with 300-nm-wide channel, the devices exhibited superior performances of maximum extrinsic transconductance of 194.2 mS/mm, threshold voltage of −1.4 V, extrinsic unit gain cutoff frequency of 6.4 GHz, maximum oscillation frequency of 14.8 GHz, and normalized noise power of 8.45 <inline-formula> <tex-math notation="LaTeX">$\times \,\, 10^{-15}$ </tex-math></inline-formula> Hz<inline-formula> <tex-math notation="LaTeX">$^{-1}$ </tex-math></inline-formula>. It was also demonstrated that the associated performances were improved by reducing the width of fin-channel array. |
| format |
article |
| author |
Hsin-Ying Lee Ting-Wei Chang Edward Yi Chang Niklas Rorsman Ching-Ting Lee |
| author_facet |
Hsin-Ying Lee Ting-Wei Chang Edward Yi Chang Niklas Rorsman Ching-Ting Lee |
| author_sort |
Hsin-Ying Lee |
| title |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer |
| title_short |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer |
| title_full |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer |
| title_fullStr |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer |
| title_full_unstemmed |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer |
| title_sort |
fabrication and characterization of gan-based fin-channel array metal-oxide-semiconductor high-electron mobility transistors with recessed-gate and ga₂o₃ gate insulator layer |
| publisher |
IEEE |
| publishDate |
2021 |
| url |
https://doaj.org/article/41e63c6263494c7e94e1edeaa8d13b04 |
| work_keys_str_mv |
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