Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

In this work, the properties of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapo...

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Bibliographic Details
Main Authors: Hsin-Ying Lee, Ting-Wei Chang, Edward Yi Chang, Niklas Rorsman, Ching-Ting Lee
Format: article
Language:EN
Published: IEEE 2021
Subjects:
Ga₂O₃ gate insulator layer
GaN-based MOSHEMTs
laser interference photolithography system
fin-channel array
vapor cooling condensation system
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Online Access:https://doaj.org/article/41e63c6263494c7e94e1edeaa8d13b04
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https://doaj.org/article/41e63c6263494c7e94e1edeaa8d13b04

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