Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer
In this work, the properties of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapo...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/41e63c6263494c7e94e1edeaa8d13b04 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sea el primero en dejar un comentario!