Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Abstract One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In...

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Autores principales:	R. Lukose, M. Lisker, F. Akhtar, M. Fraschke, T. Grabolla, A. Mai, M. Lukosius
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/437b9e6e890d4f0b9a0094b3ddfb0afe
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spelling	oai:doaj.org-article:437b9e6e890d4f0b9a0094b3ddfb0afe2021-12-02T17:12:25ZInfluence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene10.1038/s41598-021-92432-42045-2322https://doaj.org/article/437b9e6e890d4f0b9a0094b3ddfb0afe2021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-92432-4https://doaj.org/toc/2045-2322Abstract One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.R. LukoseM. LiskerF. AkhtarM. FraschkeT. GrabollaA. MaiM. LukosiusNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q R. Lukose M. Lisker F. Akhtar M. Fraschke T. Grabolla A. Mai M. Lukosius Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene
description	Abstract One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.
format	article
author	R. Lukose M. Lisker F. Akhtar M. Fraschke T. Grabolla A. Mai M. Lukosius
author_facet	R. Lukose M. Lisker F. Akhtar M. Fraschke T. Grabolla A. Mai M. Lukosius
author_sort	R. Lukose
title	Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene
title_short	Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene
title_full	Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene
title_fullStr	Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene
title_full_unstemmed	Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene
title_sort	influence of plasma treatment on sio2/si and si3n4/si substrates for large-scale transfer of graphene
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/437b9e6e890d4f0b9a0094b3ddfb0afe
work_keys_str_mv	AT rlukose influenceofplasmatreatmentonsio2siandsi3n4sisubstratesforlargescaletransferofgraphene AT mlisker influenceofplasmatreatmentonsio2siandsi3n4sisubstratesforlargescaletransferofgraphene AT fakhtar influenceofplasmatreatmentonsio2siandsi3n4sisubstratesforlargescaletransferofgraphene AT mfraschke influenceofplasmatreatmentonsio2siandsi3n4sisubstratesforlargescaletransferofgraphene AT tgrabolla influenceofplasmatreatmentonsio2siandsi3n4sisubstratesforlargescaletransferofgraphene AT amai influenceofplasmatreatmentonsio2siandsi3n4sisubstratesforlargescaletransferofgraphene AT mlukosius influenceofplasmatreatmentonsio2siandsi3n4sisubstratesforlargescaletransferofgraphene
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Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

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