Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene
Abstract One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In...
Guardado en:
Autores principales: | R. Lukose, M. Lisker, F. Akhtar, M. Fraschke, T. Grabolla, A. Mai, M. Lukosius |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/437b9e6e890d4f0b9a0094b3ddfb0afe |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Author Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene
por: R. Lukose, et al.
Publicado: (2021) -
Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature
por: Bo-Yu Chen, et al.
Publicado: (2021) -
Electrically-triggered micro-explosion in a graphene/SiO2/Si structure
por: Siyang Liu, et al.
Publicado: (2018) -
Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
por: Can Li, et al.
Publicado: (2017) -
Correspondence: On the nature of strong piezoelectricity in graphene on SiO2
por: Christoph Stampfer, et al.
Publicado: (2016)