Normally-OFF GaN MIS-HEMT With F<sup>&#x2212;</sup> Doped Gate Insulator Using Standard Ion Implantation

Normally-OFF GaN MIS-HEMT With F<sup>&#x2212;</sup> Doped Gate Insulator Using Standard Ion Implantation

A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate insulator and the partially recessed barrier layer, r...

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Autores principales: Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang
Formato: article
Lenguaje:EN
Publicado: IEEE 2018
Materias:
AlGaN/GaN
MIS-HEMT
enhancement-mode
normally-OFF
Al₂O₃
fluorine ion implantation
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/56af2a5b502a41ebb7cea73bc5646100
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https://doaj.org/article/56af2a5b502a41ebb7cea73bc5646100

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