Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation
A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate insulator and the partially recessed barrier layer, r...
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2018
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oai:doaj.org-article:56af2a5b502a41ebb7cea73bc56461002021-11-19T00:00:38ZNormally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation2168-673410.1109/JEDS.2018.2859769https://doaj.org/article/56af2a5b502a41ebb7cea73bc56461002018-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8419251/https://doaj.org/toc/2168-6734A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate insulator and the partially recessed barrier layer, resulting in high positive threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ th}}$ </tex-math></inline-formula>) for the device, meanwhile preserving low ON-resistance. Compared to the fluorine-free and recess-free device, only about 16% increase of ON-resistance was observed for the F<sup>−</sup> doped devices. The fabricated F<sup>−</sup> doped device exhibits a threshold voltage of +0.68 V at <inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ DS}}= 5~\mu \text{A}$ </tex-math></inline-formula>/mm, a current density of 620 mA/mm, an OFF-state breakdown voltage of 800 V, and high ON/OFF current ratio of 10<sup>10</sup>. For thermal stability consideration of fluorine dopant, the <inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ th}}$ </tex-math></inline-formula>-thermal stability test and positive bias temperature instability test were also discussed.Chia-Hsun WuPing-Cheng HanQuang Ho LucChing-Yi HsuTing-En HsiehHuan-Chung WangYen-Ku LinPo-Chun ChangYueh-Chin LinEdward Yi ChangIEEEarticleAlGaN/GaNMIS-HEMTenhancement-modenormally-OFFAl₂O₃fluorine ion implantationElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 6, Pp 893-899 (2018) |
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DOAJ |
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DOAJ |
| language |
EN |
| topic |
AlGaN/GaN MIS-HEMT enhancement-mode normally-OFF Al₂O₃ fluorine ion implantation Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| spellingShingle |
AlGaN/GaN MIS-HEMT enhancement-mode normally-OFF Al₂O₃ fluorine ion implantation Electrical engineering. Electronics. Nuclear engineering TK1-9971 Chia-Hsun Wu Ping-Cheng Han Quang Ho Luc Ching-Yi Hsu Ting-En Hsieh Huan-Chung Wang Yen-Ku Lin Po-Chun Chang Yueh-Chin Lin Edward Yi Chang Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation |
| description |
A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate insulator and the partially recessed barrier layer, resulting in high positive threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ th}}$ </tex-math></inline-formula>) for the device, meanwhile preserving low ON-resistance. Compared to the fluorine-free and recess-free device, only about 16% increase of ON-resistance was observed for the F<sup>−</sup> doped devices. The fabricated F<sup>−</sup> doped device exhibits a threshold voltage of +0.68 V at <inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ DS}}= 5~\mu \text{A}$ </tex-math></inline-formula>/mm, a current density of 620 mA/mm, an OFF-state breakdown voltage of 800 V, and high ON/OFF current ratio of 10<sup>10</sup>. For thermal stability consideration of fluorine dopant, the <inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ th}}$ </tex-math></inline-formula>-thermal stability test and positive bias temperature instability test were also discussed. |
| format |
article |
| author |
Chia-Hsun Wu Ping-Cheng Han Quang Ho Luc Ching-Yi Hsu Ting-En Hsieh Huan-Chung Wang Yen-Ku Lin Po-Chun Chang Yueh-Chin Lin Edward Yi Chang |
| author_facet |
Chia-Hsun Wu Ping-Cheng Han Quang Ho Luc Ching-Yi Hsu Ting-En Hsieh Huan-Chung Wang Yen-Ku Lin Po-Chun Chang Yueh-Chin Lin Edward Yi Chang |
| author_sort |
Chia-Hsun Wu |
| title |
Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation |
| title_short |
Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation |
| title_full |
Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation |
| title_fullStr |
Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation |
| title_full_unstemmed |
Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation |
| title_sort |
normally-off gan mis-hemt with f<sup>−</sup> doped gate insulator using standard ion implantation |
| publisher |
IEEE |
| publishDate |
2018 |
| url |
https://doaj.org/article/56af2a5b502a41ebb7cea73bc5646100 |
| work_keys_str_mv |
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| _version_ |
1718420668650881024 |