Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions

Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions

Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF<sub>4</sub>, H<sub>2</sub> and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical depositio...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Mario Moreno, Arturo Ponce, Arturo Galindo, Eduardo Ortega, Alfredo Morales, Javier Flores, Roberto Ambrosio, Alfonso Torres, Luis Hernandez, Hector Vazquez-Leal, Gilles Patriarche, Pere Roca i Cabarrocas
Format: article
Langue:EN
Publié: MDPI AG 2021
Sujets:
microcrystalline silicon
epitaxial growth
plasma enhanced chemical vapor deposition
electron microscopy
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Accès en ligne:https://doaj.org/article/6bd1ccdf9122499d8bf699a71bfed223
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!

Internet

https://doaj.org/article/6bd1ccdf9122499d8bf699a71bfed223

Documents similaires