Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions

Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF4, H2 and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical depositio...

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Autores principales:	Mario Moreno, Arturo Ponce, Arturo Galindo, Eduardo Ortega, Alfredo Morales, Javier Flores, Roberto Ambrosio, Alfonso Torres, Luis Hernandez, Hector Vazquez-Leal, Gilles Patriarche, Pere Roca i Cabarrocas
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	microcrystalline silicon epitaxial growth plasma enhanced chemical vapor deposition electron microscopy Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/6bd1ccdf9122499d8bf699a71bfed223
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Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions

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