Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide

Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure of fine-pitched (2-µm) is different from that of 10...

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Autores principales:	I-Hsin Tseng, Po-Ning Hsu, Wei-You Hsu, Dinh-Phuc Tran, Benson Tsu-Hung Lin, Chia-Cheng Chang, K.N. Tu, Chih Chen
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Electromigration Redistribution layers Nanotwinned copper Fine pitch Oxidation Physics QC1-999
Acceso en línea:	https://doaj.org/article/6d99f61ff02c41d1a3324aeeba488ef9
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id	oai:doaj.org-article:6d99f61ff02c41d1a3324aeeba488ef9
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spelling	oai:doaj.org-article:6d99f61ff02c41d1a3324aeeba488ef92021-11-26T04:28:18ZEffect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide2211-379710.1016/j.rinp.2021.105048https://doaj.org/article/6d99f61ff02c41d1a3324aeeba488ef92021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2211379721010378https://doaj.org/toc/2211-3797Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure of fine-pitched (2-µm) is different from that of 10-µm RDLs, which is void formation. The failure of the 2-µm RDLs is mainly caused by severe oxidation during EM. To analyze the EM failure of the Cu RDLs with different pitches, the oxidation area of nanotwinned copper (nt-Cu) and regular Cu RDLs during EM was compared. We propose an oxidation equation to estimate the resistance increase of RDLs with various widths.I-Hsin TsengPo-Ning HsuWei-You HsuDinh-Phuc TranBenson Tsu-Hung LinChia-Cheng ChangK.N. TuChih ChenElsevierarticleElectromigrationRedistribution layersNanotwinned copperFine pitchOxidationPhysicsQC1-999ENResults in Physics, Vol 31, Iss , Pp 105048- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electromigration Redistribution layers Nanotwinned copper Fine pitch Oxidation Physics QC1-999
spellingShingle	Electromigration Redistribution layers Nanotwinned copper Fine pitch Oxidation Physics QC1-999 I-Hsin Tseng Po-Ning Hsu Wei-You Hsu Dinh-Phuc Tran Benson Tsu-Hung Lin Chia-Cheng Chang K.N. Tu Chih Chen Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide
description	Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure of fine-pitched (2-µm) is different from that of 10-µm RDLs, which is void formation. The failure of the 2-µm RDLs is mainly caused by severe oxidation during EM. To analyze the EM failure of the Cu RDLs with different pitches, the oxidation area of nanotwinned copper (nt-Cu) and regular Cu RDLs during EM was compared. We propose an oxidation equation to estimate the resistance increase of RDLs with various widths.
format	article
author	I-Hsin Tseng Po-Ning Hsu Wei-You Hsu Dinh-Phuc Tran Benson Tsu-Hung Lin Chia-Cheng Chang K.N. Tu Chih Chen
author_facet	I-Hsin Tseng Po-Ning Hsu Wei-You Hsu Dinh-Phuc Tran Benson Tsu-Hung Lin Chia-Cheng Chang K.N. Tu Chih Chen
author_sort	I-Hsin Tseng
title	Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide
title_short	Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide
title_full	Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide
title_fullStr	Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide
title_full_unstemmed	Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide
title_sort	effect of oxidation on electromigration in 2-µm cu redistribution lines capped with polyimide
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/6d99f61ff02c41d1a3324aeeba488ef9
work_keys_str_mv	AT ihsintseng effectofoxidationonelectromigrationin2μmcuredistributionlinescappedwithpolyimide AT poninghsu effectofoxidationonelectromigrationin2μmcuredistributionlinescappedwithpolyimide AT weiyouhsu effectofoxidationonelectromigrationin2μmcuredistributionlinescappedwithpolyimide AT dinhphuctran effectofoxidationonelectromigrationin2μmcuredistributionlinescappedwithpolyimide AT bensontsuhunglin effectofoxidationonelectromigrationin2μmcuredistributionlinescappedwithpolyimide AT chiachengchang effectofoxidationonelectromigrationin2μmcuredistributionlinescappedwithpolyimide AT kntu effectofoxidationonelectromigrationin2μmcuredistributionlinescappedwithpolyimide AT chihchen effectofoxidationonelectromigrationin2μmcuredistributionlinescappedwithpolyimide
_version_	1718409906485198848

Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide

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