Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is...

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Autores principales: Jun-Kyo Jeong, Jae-Young Sung, Woon-San Ko, Ki-Ryung Nam, Hi-Deok Lee, Ga-Won Lee
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/6f43c6382e7747d8b6ace45c84bd2542
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