Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is...

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Autores principales:	Jun-Kyo Jeong, Jae-Young Sung, Woon-San Ko, Ki-Ryung Nam, Hi-Deok Lee, Ga-Won Lee
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	SONOS flash memory poly silicon roughness data retention atomic force microscope (AFM) Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/6f43c6382e7747d8b6ace45c84bd2542
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id	oai:doaj.org-article:6f43c6382e7747d8b6ace45c84bd2542
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spelling	oai:doaj.org-article:6f43c6382e7747d8b6ace45c84bd25422021-11-25T18:23:43ZPhysical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory10.3390/mi121114012072-666Xhttps://doaj.org/article/6f43c6382e7747d8b6ace45c84bd25422021-11-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1401https://doaj.org/toc/2072-666XIn this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is enlarged with the number of interface traps and the data retention properties are deteriorated in the device with underlying poly-Si channel which can be serious problem in gate-last 3D NAND flash memory architecture. To improve the memory performance, high pressure deuterium (D<sub>2</sub>) annealing is suggested as a low-temperature process and the program window and threshold voltage shift in data retention mode is compared before and after the D<sub>2</sub> annealing. The suggested curing is found to be effective in improving the device reliability.Jun-Kyo JeongJae-Young SungWoon-San KoKi-Ryung NamHi-Deok LeeGa-Won LeeMDPI AGarticleSONOSflash memorypoly siliconroughnessdata retentionatomic force microscope (AFM)Mechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1401, p 1401 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	SONOS flash memory poly silicon roughness data retention atomic force microscope (AFM) Mechanical engineering and machinery TJ1-1570
spellingShingle	SONOS flash memory poly silicon roughness data retention atomic force microscope (AFM) Mechanical engineering and machinery TJ1-1570 Jun-Kyo Jeong Jae-Young Sung Woon-San Ko Ki-Ryung Nam Hi-Deok Lee Ga-Won Lee Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
description	In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is enlarged with the number of interface traps and the data retention properties are deteriorated in the device with underlying poly-Si channel which can be serious problem in gate-last 3D NAND flash memory architecture. To improve the memory performance, high pressure deuterium (D<sub>2</sub>) annealing is suggested as a low-temperature process and the program window and threshold voltage shift in data retention mode is compared before and after the D<sub>2</sub> annealing. The suggested curing is found to be effective in improving the device reliability.
format	article
author	Jun-Kyo Jeong Jae-Young Sung Woon-San Ko Ki-Ryung Nam Hi-Deok Lee Ga-Won Lee
author_facet	Jun-Kyo Jeong Jae-Young Sung Woon-San Ko Ki-Ryung Nam Hi-Deok Lee Ga-Won Lee
author_sort	Jun-Kyo Jeong
title	Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
title_short	Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
title_full	Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
title_fullStr	Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
title_full_unstemmed	Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
title_sort	physical and electrical analysis of poly-si channel effect on sonos flash memory
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/6f43c6382e7747d8b6ace45c84bd2542
work_keys_str_mv	AT junkyojeong physicalandelectricalanalysisofpolysichanneleffectonsonosflashmemory AT jaeyoungsung physicalandelectricalanalysisofpolysichanneleffectonsonosflashmemory AT woonsanko physicalandelectricalanalysisofpolysichanneleffectonsonosflashmemory AT kiryungnam physicalandelectricalanalysisofpolysichanneleffectonsonosflashmemory AT hideoklee physicalandelectricalanalysisofpolysichanneleffectonsonosflashmemory AT gawonlee physicalandelectricalanalysisofpolysichanneleffectonsonosflashmemory
_version_	1718411203939663872

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

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