A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices. To test models of oxygen movement in ReRAM devices beyond what has previously been pos...

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Autores principales:	Horatio R. J. Cox, Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Adnan Mehonic, Paul R. Shearing, Sarah Fearn, Anthony J. Kenyon
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Biotechnology TP248.13-248.65 Physics QC1-999
Acceso en línea:	https://doaj.org/article/6fb9ffa027bb410f95376d9d8dd875ab
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spelling	oai:doaj.org-article:6fb9ffa027bb410f95376d9d8dd875ab2021-12-01T18:51:23ZA nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices2166-532X10.1063/5.0070046https://doaj.org/article/6fb9ffa027bb410f95376d9d8dd875ab2021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0070046https://doaj.org/toc/2166-532XThe limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices. To test models of oxygen movement in ReRAM devices beyond what has previously been possible, we present a new nanoscale analysis method. Harnessing the power of secondary ion mass spectrometry, the most sensitive surface analysis technique, for the first time, we observe the movement of 16O across electrically biased SiOx ReRAM stacks. We can therefore measure bulk concentration changes in a continuous profile with unprecedented sensitivity. This reveals the nanoscale details of the reversible field-driven exchange of oxygen across the ReRAM stack. Both the reservoir-like behavior of a Mo electrode and the injection of oxygen into the surface of SiOx from the ambient are observed within one profile. The injection of oxygen is controllable through changing the porosity of the SiOx layer. Modeling of the electric fields in the ReRAM stacks is carried out which, for the first time, uses real measurements of both the interface roughness and electrode porosity. This supports our findings helping to explain how and where oxygen from ambient moisture enters devices during operation.Horatio R. J. CoxMark BuckwellWing H. NgDaniel J. MannionAdnan MehonicPaul R. ShearingSarah FearnAnthony J. KenyonAIP Publishing LLCarticleBiotechnologyTP248.13-248.65PhysicsQC1-999ENAPL Materials, Vol 9, Iss 11, Pp 111109-111109-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Biotechnology TP248.13-248.65 Physics QC1-999
spellingShingle	Biotechnology TP248.13-248.65 Physics QC1-999 Horatio R. J. Cox Mark Buckwell Wing H. Ng Daniel J. Mannion Adnan Mehonic Paul R. Shearing Sarah Fearn Anthony J. Kenyon A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices
description	The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices. To test models of oxygen movement in ReRAM devices beyond what has previously been possible, we present a new nanoscale analysis method. Harnessing the power of secondary ion mass spectrometry, the most sensitive surface analysis technique, for the first time, we observe the movement of 16O across electrically biased SiOx ReRAM stacks. We can therefore measure bulk concentration changes in a continuous profile with unprecedented sensitivity. This reveals the nanoscale details of the reversible field-driven exchange of oxygen across the ReRAM stack. Both the reservoir-like behavior of a Mo electrode and the injection of oxygen into the surface of SiOx from the ambient are observed within one profile. The injection of oxygen is controllable through changing the porosity of the SiOx layer. Modeling of the electric fields in the ReRAM stacks is carried out which, for the first time, uses real measurements of both the interface roughness and electrode porosity. This supports our findings helping to explain how and where oxygen from ambient moisture enters devices during operation.
format	article
author	Horatio R. J. Cox Mark Buckwell Wing H. Ng Daniel J. Mannion Adnan Mehonic Paul R. Shearing Sarah Fearn Anthony J. Kenyon
author_facet	Horatio R. J. Cox Mark Buckwell Wing H. Ng Daniel J. Mannion Adnan Mehonic Paul R. Shearing Sarah Fearn Anthony J. Kenyon
author_sort	Horatio R. J. Cox
title	A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices
title_short	A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices
title_full	A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices
title_fullStr	A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices
title_full_unstemmed	A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices
title_sort	nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in reram devices
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/6fb9ffa027bb410f95376d9d8dd875ab
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A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

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