A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices. To test models of oxygen movement in ReRAM devices beyond what has previously been pos...

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Autores principales: Horatio R. J. Cox, Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Adnan Mehonic, Paul R. Shearing, Sarah Fearn, Anthony J. Kenyon
Formato: article
Lenguaje:EN
Publicado: AIP Publishing LLC 2021
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Acceso en línea:https://doaj.org/article/6fb9ffa027bb410f95376d9d8dd875ab
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