Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
Abstract Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary fo...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/763dd210632d425e936ddcb1a042cc24 |
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