Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3

Abstract Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary fo...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Verdad C. Agulto, Toshiyuki Iwamoto, Hideaki Kitahara, Kazuhiro Toya, Valynn Katrine Mag-usara, Masayuki Imanishi, Yusuke Mori, Masashi Yoshimura, Makoto Nakajima
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/763dd210632d425e936ddcb1a042cc24
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:763dd210632d425e936ddcb1a042cc24
record_format	dspace
spelling	oai:doaj.org-article:763dd210632d425e936ddcb1a042cc242021-12-02T15:15:40ZTerahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−310.1038/s41598-021-97253-z2045-2322https://doaj.org/article/763dd210632d425e936ddcb1a042cc242021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-97253-zhttps://doaj.org/toc/2045-2322Abstract Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary for high-voltage and high-frequency applications. For the development of GaN devices, nondestructive characterization of electrical properties particularly for carrier densities in the order of 1019 cm−3 or higher is highly favorable. In this study, we investigated GaN single crystals with different carrier densities of up to 1020 cm−3 using THz time-domain ellipsometry in reflection configuration. The p- and s-polarized THz waves reflected off the GaN samples are measured and then corrected based on the analysis of multiple waveforms measured with a rotating analyzer. We show that performing such analysis leads to a ten times higher precision than by merely measuring the polarization components. As a result, the carrier density and mobility parameters can be unambiguously determined even at high conductivities.Verdad C. AgultoToshiyuki IwamotoHideaki KitaharaKazuhiro ToyaValynn Katrine Mag-usaraMasayuki ImanishiYusuke MoriMasashi YoshimuraMakoto NakajimaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Verdad C. Agulto Toshiyuki Iwamoto Hideaki Kitahara Kazuhiro Toya Valynn Katrine Mag-usara Masayuki Imanishi Yusuke Mori Masashi Yoshimura Makoto Nakajima Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
description	Abstract Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary for high-voltage and high-frequency applications. For the development of GaN devices, nondestructive characterization of electrical properties particularly for carrier densities in the order of 1019 cm−3 or higher is highly favorable. In this study, we investigated GaN single crystals with different carrier densities of up to 1020 cm−3 using THz time-domain ellipsometry in reflection configuration. The p- and s-polarized THz waves reflected off the GaN samples are measured and then corrected based on the analysis of multiple waveforms measured with a rotating analyzer. We show that performing such analysis leads to a ten times higher precision than by merely measuring the polarization components. As a result, the carrier density and mobility parameters can be unambiguously determined even at high conductivities.
format	article
author	Verdad C. Agulto Toshiyuki Iwamoto Hideaki Kitahara Kazuhiro Toya Valynn Katrine Mag-usara Masayuki Imanishi Yusuke Mori Masashi Yoshimura Makoto Nakajima
author_facet	Verdad C. Agulto Toshiyuki Iwamoto Hideaki Kitahara Kazuhiro Toya Valynn Katrine Mag-usara Masayuki Imanishi Yusuke Mori Masashi Yoshimura Makoto Nakajima
author_sort	Verdad C. Agulto
title	Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
title_short	Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
title_full	Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
title_fullStr	Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
title_full_unstemmed	Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
title_sort	terahertz time-domain ellipsometry with high precision for the evaluation of gan crystals with carrier densities up to 1020 cm−3
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/763dd210632d425e936ddcb1a042cc24
work_keys_str_mv	AT verdadcagulto terahertztimedomainellipsometrywithhighprecisionfortheevaluationofgancrystalswithcarrierdensitiesupto1020cm3 AT toshiyukiiwamoto terahertztimedomainellipsometrywithhighprecisionfortheevaluationofgancrystalswithcarrierdensitiesupto1020cm3 AT hideakikitahara terahertztimedomainellipsometrywithhighprecisionfortheevaluationofgancrystalswithcarrierdensitiesupto1020cm3 AT kazuhirotoya terahertztimedomainellipsometrywithhighprecisionfortheevaluationofgancrystalswithcarrierdensitiesupto1020cm3 AT valynnkatrinemagusara terahertztimedomainellipsometrywithhighprecisionfortheevaluationofgancrystalswithcarrierdensitiesupto1020cm3 AT masayukiimanishi terahertztimedomainellipsometrywithhighprecisionfortheevaluationofgancrystalswithcarrierdensitiesupto1020cm3 AT yusukemori terahertztimedomainellipsometrywithhighprecisionfortheevaluationofgancrystalswithcarrierdensitiesupto1020cm3 AT masashiyoshimura terahertztimedomainellipsometrywithhighprecisionfortheevaluationofgancrystalswithcarrierdensitiesupto1020cm3 AT makotonakajima terahertztimedomainellipsometrywithhighprecisionfortheevaluationofgancrystalswithcarrierdensitiesupto1020cm3
_version_	1718387514879770624

Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3

Ejemplares similares